Model development for analyzing 2DEG sheet charge density...

Journal of Semiconductors 2014 / 10 Vol. 35; Iss. 10

Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT

Pandey, Devashish, Lenka, T. R.
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Volume:
35
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/35/10/104001
Date:
October, 2014
File:
PDF, 236 KB
english, 2014
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