Improving Breakdown Behavior by Substrate Bias in a Novel...

Chinese Physics Letters 2012 / 02 Vol. 29; Iss. 2

Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor

Li, Qi, Wang, Wei-Dong, Liu, Yun, Wei, Xue-Ming
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Volume:
29
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/29/2/027303
Date:
February, 2012
File:
PDF, 781 KB
english, 2012
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