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Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C
Leconte, Y., Rizk, Richard, Gourbilleau, F., Voivenel, P., Lejeune, M., Goncalves, C.Volume:
80-81
Year:
2001
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.80-81.65
File:
PDF, 551 KB
2001