MOCVD Growth and Properties of InGaN/GaN Multi-Quantum...

Materials Science Forum 1998 Vol. 264-268

MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells

Keller, S., Cabané, F., Minsky, M.S., Wu, Xing Hui, Mack, M.P., Speck, James S., Hu, E., Coldren, L.A., Mishra, Umesh K., DenBaars, Steven P.
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Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.1157
File:
PDF, 329 KB
1998
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