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Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
Hoshikawa, Keigo, Huang, Xinming, Taishi, Toshinori, Kajigaya, Tomio, Iino, TakayukiVolume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.38.l1369
Date:
December, 1999
File:
PDF, 1.17 MB
english, 1999