Gate Structure Dependence of Variability in Polycrystalline...

Japanese Journal of Applied Physics 2013 / 06 Vol. 52; Iss. 6S

Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories

Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahar
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.06GE01
Date:
June, 2013
File:
PDF, 438 KB
english, 2013
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