Modulation of Interface and Bulk States in Amorphous...

Japanese Journal of Applied Physics 2013 / 09 Vol. 52; Iss. 9R

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

Zhan, Runze, Dong, Chengyuan, Yang, Bo-Ru, Shieh, Han-Ping D.
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.090205
Date:
September, 2013
File:
PDF, 3.12 MB
english, 2013
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