[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate
Agrawal, A., Barth, M., Rayner, G. B., Arun, V. T., Eichfeld, C., Lavallee, G., Yu, S-Y., Sang, X., Brookes, S., Zheng, Y., Lee, Y-J., Lin, Y-R., Wu, C-H., Ko, C-H., LeBeau, J., Engel-Herbert, R., MohYear:
2014
Language:
english
DOI:
10.1109/IEDM.2014.7047064
File:
PDF, 1.16 MB
english, 2014