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Electric-stress reliability and current collapse of different thickness SiN x passivated AlGaN/GaN high electron mobility transistors
Ling, Yang, Gui-Zhou, Hu, Yue, Hao, Xiao-Hua, Ma, Si, Quan, Li-Yuan, Yang, Shou-Gao, JiangVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/4/047301
Date:
April, 2010
File:
PDF, 147 KB
english, 2010