A continuous analytic channel potential solution to doped...

Chinese Physics B 2011 / 01 Vol. 20; Iss. 1

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

He, Jin, Liu, Feng, Zhou, Xing-Ye, Zhang, Jian, Zhang, Li-Ning
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Volume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/1/016102
Date:
January, 2011
File:
PDF, 1.01 MB
english, 2011
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