Novel gate-all-around polycrystalline silicon nanowire...

Japanese Journal of Applied Physics 2014 / 01 Vol. 53; Iss. 1

Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer

Lee, Ko-Hui, Lin, Horng-Chih, Huang, Tiao-Yuan
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.014001
Date:
January, 2014
File:
PDF, 168 KB
english, 2014
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