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Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
Xin-Hua, Li, Fei, Zhong, Kai, Qiu, Zhi-Jun, Yin, Chang-Jian, JiVolume:
17
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/17/4/034
Date:
April, 2008
File:
PDF, 2.45 MB
english, 2008