Raman analysis of epitaxial graphene grown on 4H—SiC (0001)...

Chinese Physics B 2011 / 12 Vol. 20; Iss. 12

Raman analysis of epitaxial graphene grown on 4H—SiC (0001) substrate under low pressure condition

Wang, Dang-Chao, Zhang, Yu-Ming, Zhang, Yi-Men, Lei, Tian-Min, Guo, Hui, Wang, Yue-Hu, Tang, Xiao-Yan, Wang, Hang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/12/128101
Date:
December, 2011
File:
PDF, 932 KB
english, 2011
Conversion to is in progress
Conversion to is failed