Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory
Yue, Xu, Feng, Yan, Dun-Jun, Chen, Yi, Shi, Yong-Gang, Wang, Zhi-Guo, Li, Fan, Yang, Jos-Hua, Wang, Peter, Lin, Jian-Guang, ChangVolume:
27
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/27/6/067201
Date:
June, 2010
File:
PDF, 91 KB
english, 2010