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Atomic Layer Deposition of Al 2 O 3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1
Yu, Shi, Qing-Qing, Sun, Lin, Dong, Han, Liu, Shi-Jin, Ding, Wei, ZhangVolume:
26
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/26/5/053101
Date:
May, 2009
File:
PDF, 91 KB
english, 2009