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Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors
Fang, Yulong, Dun, Shaobo, Liu, Bo, Yin, Jiayun, Cai, Shujun, Feng, ZhihongVolume:
33
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/33/5/054005
Date:
May, 2012
File:
PDF, 258 KB
english, 2012