Growth of Highly Conductive n-Type Al 0.7...

Chinese Physics Letters 2008 / 12 Vol. 25; Iss. 12

Growth of Highly Conductive n-Type Al 0.7 Ga 0.3 N Film by Using AlN Buffer with Periodical Variation of V/III Ratio

Jie, Zhang, Li-Wei, Guo, Zhi-Gang, Xing, Bing-Hui, Ge, Guo-Jian, Ding, Ming-Zeng, Peng, Hai-Qiang, Jia, Jun-Ming, Zhou, Hong, Chen
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Volume:
25
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/25/12/074
Date:
December, 2008
File:
PDF, 135 KB
english, 2008
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