Impact of barrier thickness on gate capacitance—modeling...

Journal of Semiconductors 2015 / 03 Vol. 36; Iss. 3

Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs

Jena, Kanjalochan, Swain, Raghunandan, Lenka, T. R.
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Volume:
36
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/36/3/034003
Date:
March, 2015
File:
PDF, 2.45 MB
english, 2015
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