Electrical Properties of Sc Schottky Barrier Diodes...

Japanese Journal of Applied Physics 1998 / 1 Vol. 37; Iss. Part 2, No

Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs

Goodman, Stewart A., Auret, F. Danie, Deenapanray, Prakash N. K., Myburg, Gerrit
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.37.l10
Date:
January, 1998
File:
PDF, 927 KB
english, 1998
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