Ballistic transport in InGaN-based LEDs: impact on...

Semiconductor Science and Technology 2011 / 01 Vol. 26; Iss. 1

Ballistic transport in InGaN-based LEDs: impact on efficiency

Özgür, Ü, Ni, X, Li, X, Lee, J, Liu, S, Okur, S, Avrutin, V, Matulionis, A, Morkoç, H
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Volume:
26
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/26/1/014022
Date:
January, 2011
File:
PDF, 175 KB
english, 2011
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