The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors
Xin-Hua, Wang, Miao, Zhao, Xin-Yu, Liu, Yan, Pu, Ying-Kui, Zheng, Ke, WeiVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/9/097302
Date:
September, 2010
File:
PDF, 1.99 MB
english, 2010