A strained Si-channel NMOSFET with low field mobility...

Journal of Semiconductors 2012 / 09 Vol. 33; Iss. 9

A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate

Cui, Wei, Tang, Zhaohuan, Tan, Kaizhou, Zhang, Jing, Zhong, Yi, Hu, Huiyong, Xu, Shiliu, Li, Ping, Hu, Gangyi
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Volume:
33
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/33/9/094005
Date:
September, 2012
File:
PDF, 175 KB
english, 2012
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