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Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge
Hu, Bo, Huang, Shi-Hua, Wu, Feng-MinVolume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/1/017301
Date:
January, 2013
File:
PDF, 367 KB
english, 2013