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High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN x surface passivation layer deposited by low pressure CVD
Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D.Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.08NH02
Date:
August, 2014
File:
PDF, 120 KB
english, 2014