Improvement on the dynamical performance of a power bipolar...

Journal of Semiconductors 2011 / 11 Vol. 32; Iss. 11

Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

Wang, Yongshun, Feng, Jingjing, Liu, Chunjuan, Wang, Zaixing, Zhang, Caizhen, Chang, Peng
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Volume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/11/114005
Date:
November, 2011
File:
PDF, 2.88 MB
english, 2011
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