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The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer
Wang, T, Lee, K B, Bai, J, Parbrook, P J, Ranalli, F, Wang, Q, Airey, R J, Cullis, A G, Zhang, H X, Massoubre, D, Gong, Z, Watson, I M, Gu, E, Dawson, M DVolume:
41
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/41/9/094003
Date:
May, 2008
File:
PDF, 420 KB
english, 2008