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Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
Yu, Ying-Xia, Lin, Zhao-Jun, Luan, Chong-Biao, Wang, Yu-Tang, Chen, Hong, Wang, Zhan-GuoVolume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/6/067203
Date:
June, 2013
File:
PDF, 552 KB
english, 2013