Optimization of Dislocation Edge Stress Effects for Si N-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Liao, Ming-Han, Chen, Ci-Hua, Chang, Li-Chen, Yang, Chen, Yu, Ming-Yuan, Liu, Gan-Han, Kao, Si-ChaVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CC20
Date:
April, 2013
File:
PDF, 505 KB
english, 2013