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Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation
Okuda, Takafumi, Kimoto, Tsunenobu, Suda, JunVolume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.6.121301
Date:
December, 2013
File:
PDF, 425 KB
english, 2013