Enhancement-Mode AlGaN/GaN High Electron Mobility...

Chinese Physics Letters 2011 / 07 Vol. 28; Iss. 7

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Liu, Sheng-Hou, Cai, Yong, Gong, Ru-Min, Wang, Jin-Yan, Zeng, Chun-Hong, Shi, Wen-Hua, Feng, Zhi-Hong, Wang, Jing-Jing, Yin, Jia-Yun, Cheng, P. Wen, Qin, Hua, Zhang, Bao-Shun
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Volume:
28
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/28/7/077202
Date:
July, 2011
File:
PDF, 210 KB
english, 2011
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