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Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
Li, Zhicong, Li, Panpan, Wang, Bing, Li, Hongjian, Liang, Meng, Yao, Ran, Li, Jing, Deng, Yuanming, Yi, Xiaoyan, Wang, Guohong, Li, JinminVolume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/11/114007
Date:
November, 2011
File:
PDF, 507 KB
english, 2011