Valence band variation in Si (110) nanowire induced by a...

Chinese Physics B 2010 / 01 Vol. 19; Iss. 1

Valence band variation in Si (110) nanowire induced by a covered insulator

Hong-Hua, Xu, Xiao-Yan, Liu, Yu-Hui, He, Chun, Fan, Gang, Du, Ai-Dong, Sun, Ru-Qi, Han, Jin-Feng, Kang
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Volume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/1/014601
Date:
January, 2010
File:
PDF, 365 KB
english, 2010
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