Effect of Phosphorus Implantation Prior to Oxidation on...

Materials Science Forum 2014 / 10 Vol. 806

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures

Mikhaylov, Aleksey, Sledziewski, Tomasz, Afanasyev, Alexey, Luchinin, Victor, Reshanov, Sergey, Schöner, Adolf, Krieger, Michael
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
806
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.806.133
Date:
October, 2014
File:
PDF, 369 KB
english, 2014
Conversion to is in progress
Conversion to is failed