High voltage SOI LDMOS with a compound buried layer

Journal of Semiconductors 2012 / 10 Vol. 33; Iss. 10

High voltage SOI LDMOS with a compound buried layer

Luo, Xiaorong, Hu, Gangyi, Zhou, Kun, Jiang, Yongheng, Wang, Pei, Wang, Qi, Luo, Yinchun, Zhang, Bo, Li, Zhaoji
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Volume:
33
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/33/10/104003
Date:
October, 2012
File:
PDF, 730 KB
english, 2012
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