Comparison of shallow-mesa InAs/AlSb HEMTs with and without...

Semiconductor Science and Technology 2014 / 03 Vol. 29; Iss. 3

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*

Lefebvre, Eric, Moschetti, Giuseppe, Malmkvist, Mikael, Desplanque, Ludovic, Wallart, Xavier, Grahn, Jan
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Volume:
29
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/29/3/035010
Date:
March, 2014
File:
PDF, 1.39 MB
english, 2014
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