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Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlO x passivation in various thicknesses
Zhou, Daxiang, Hu, Zhe, Wu, Qi, Xu, Ling, Xie, Haiting, Dong, ChengyuanVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.121103
Date:
December, 2014
File:
PDF, 960 KB
english, 2014