Air-Annealing Effects for Pt/Ti Gate...

Air-Annealing Effects for Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistors Hydrogen Gas Sensor

Usagawa, Toshiyuki, Kikuchi, Yota
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Volume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.3.047201
Date:
March, 2010
File:
PDF, 507 KB
english, 2010
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