Impacts of Surface Roughness Reduction in (110) Si...

Japanese Journal of Applied Physics 2013 / 04 Vol. 52; Iss. 4S

Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (110) Si

Jeon, Sung-Ho, Taoka, Noriyuki, Matsumoto, Hiroaki, Nakano, Kiyotaka, Koyama, Susumu, Kakibayasi, Hiroshi, Araki, Koji, Miyashita, Moriya, Izunome, Koji, Takenaka, Mitsuru, Takagi, Shinichi
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CC26
Date:
April, 2013
File:
PDF, 960 KB
english, 2013
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