Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma
Iino, Daiki, Nojiri, Yasuhiro, Suzuki, Keiji, Oike, Takumi, Fujii, Yoshitaka, Toyoda, HirotakaVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.11NC01
Date:
November, 2013
File:
PDF, 374 KB
english, 2013