The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
Shi, Lei, Feng, Shi-Wei, Guo, Chun-Sheng, Zhu, Hui, Wan, NingVolume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/2/027201
Date:
February, 2013
File:
PDF, 597 KB
english, 2013