A new 28 nm high- k metal gate...

Japanese Journal of Applied Physics 2014 / 01 Vol. 53; Iss. 4S

A new 28 nm high- k metal gate CMOS logic one-time programmable memory cell

Hsiao, Woan Yun, Mei, Chin Yu, Shen, Wen Chao, Chih, Yue Der, King, Ya-Chin, Lin, Chrong Jung
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.04ED01
Date:
January, 2014
File:
PDF, 597 KB
english, 2014
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