A −188 V 7.2 Ω · mm 2 ,...

Chinese Physics B 2011 / 08 Vol. 20; Iss. 8

A −188 V 7.2 Ω · mm 2 , P-channel high voltage device formed on an epitaxy-SIMOX substrate

Wu, Li-Juan, Hu, Sheng-Dong, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji
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Volume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/8/087101
Date:
August, 2011
File:
PDF, 597 KB
english, 2011
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