Device characteristics of the thin-film...

Japanese Journal of Applied Physics 2014 / 06 Vol. 53; Iss. 6

Device characteristics of the thin-film silicon-on-insulator power MOSFETs at high temperatures

Ishibashi, Tsubasa, Morisawa, Yuka, Matsumoto, Satoshi
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.064102
Date:
June, 2014
File:
PDF, 62 KB
english, 2014
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