Mn Doping in Half-Heusler Semiconductors: Microstructural...

Japanese Journal of Applied Physics 2010 / 5 Vol. 49; Iss. 5

Mn Doping in Half-Heusler Semiconductors: Microstructural and Transport Properties

Wang, Fangfang, Fukuhara, Tadashi, Maezawa, Kunihiko, Masubuchi, Shinichi
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.49.053002
Date:
May, 2010
File:
PDF, 623 KB
english, 2010
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