Current Gain of 4H-SiC Bipolar Transistors Including the...

Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States

Domeij, Martin, Danielsson, Erik, Lee, Hyung Seok, Zetterling, C.M., Östling, Mikael
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.889
File:
PDF, 230 KB
english, 2005
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