Contactless Characterization of a Si Wafer with Terahertz...

Japanese Journal of Applied Physics 2013 / 11 Vol. 52; Iss. 11R

Contactless Characterization of a Si Wafer with Terahertz Time-Domain Spectroscopy Using a Continuous-Wave Multimode Laser Diode

Morikawa, Osamu, Fujita, Masami, Hangyo, Masanori
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.112401
Date:
November, 2013
File:
PDF, 552 KB
english, 2013
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