A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure
Li, Binghua, Frank, X. C. Jiang, Li, Zhigui, Lin, XinnanVolume:
34
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/34/12/124001
Date:
December, 2013
File:
PDF, 1.01 MB
english, 2013