Growth of strained-Si material using low-temperature Si...

Journal of Semiconductors 2010 / 06 Vol. 31; Iss. 6

Growth of strained-Si material using low-temperature Si combined with ion implantation technology

Hongdong, Yang, Qi, Yu, Xiangzhan, Wang, Jingchun, Li, Ning, Ning, Mohua, Yang
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Volume:
31
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/31/6/063001
Date:
June, 2010
File:
PDF, 346 KB
english, 2010
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