![](/img/cover-not-exists.png)
Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO 2 and high- k gate dielectrics
Kamei, Masayuki, Takao, Yoshinori, Eriguchi, Koji, Ono, KouichiVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.03DF02
Date:
January, 2014
File:
PDF, 1.23 MB
english, 2014