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Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs
Nishiyama, Akira, Arisumi, Osamu, Terauchi, Mamoru, Takeno, Shiroh, Suzuki, Ken, Takakuwa, Chie, Yoshimi, MakotoVolume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.35.954
Date:
February, 1996
File:
PDF, 1.26 MB
english, 1996